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| SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching PARTMARKING DETAIL DEVICE TYPE IN FULL C FZT603 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 100 80 10 6 2 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 0.79 0.80 0.88 0.99 0.86 MIN. 100 80 10 TYP. 240 110 16 0.01 10 0.1 10 0.88 0.90 1.00 1.13 MAX. UNIT V V V A A A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=80V VCB=80V, Tamb=100C VEB=8V VCES=80V IC=0.25A, IB=0.25mA* IC=0.4A, IB=0.4mA* IC=1A, IB=1mA* IC=2A, IB=20mA* IC=2A, IB=20mA V V V V V Tj=150C FZT603 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Base-Emitter Saturation Voltage SYMBOL VBE(sat) MIN. TYP. 1.7 1.5 3k 5k 3k 2k 14k 15k 14k 10k 2k 750 MAX. 1.95 1.75 100k UNIT V V CONDITIONS. IC=2A, IB=20mA* IC=2A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=5A, VCE=5V* IC=6A, VCE=5V* MHz 90 15 0.5 1.6 pF pF s s Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency Output Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff 150 IC=100mA, VCE=10V f=20MHz VEB=500mV, f=1MHz VCB=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2% Spice parameter data is available upon request for this device FZT603 TYPICAL CHARACTERISTICS - Gain normalised to 1 Amp 1.8 1.6 1.4 -55C +25C +100C +175C 2.5 -55C +25C +100C VCE=5V 2.0 - (Volts) 1.2 IC/IB=100 1.0 0.8 0.6 1.5 1.0 V 0.4 0.2 0.5 0 0.01 0.1 1 10 h 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 - (Volts) -55C +25C +100C +175C 1.8 1.6 -55C +25C +100C 1.8 1.6 1.4 1.2 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE=5V V IC/IB=100 0.8 0.6 0.4 0.01 0.1 1 10 V 1.0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test Tamb = 25 C 1 0.1 DC 1s 100ms 10ms 1ms 100S 0.01 0.1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area |
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